发明名称 SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF
摘要 PURPOSE: A semiconductor memory device and an operating method thereof are provided to show general performance characteristics by reducing a programming time. CONSTITUTION: In a semiconductor memory device and an operating method thereof, a temperature detection unit(210) outputs a temperature detection signal in response to the temperature in a core region(230). The core region comprises a plurality of memory cells A programming voltage generation unit(220) generates a programming voltage. The programming voltage corresponds to a temperature detection signal. The programming voltage generation unit outputs the program voltage to the core region.
申请公布号 KR20110121219(A) 申请公布日期 2011.11.07
申请号 KR20100040714 申请日期 2010.04.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, JI HWAN;PARK, SEONG JE
分类号 G11C16/34;G11C7/04;G11C16/12;G11C16/30 主分类号 G11C16/34
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