| 摘要 |
A solid-state image sensor according to the present invention includes a number of photosensitive cells 2b, 2c that are arranged in between the first surface 30a of a semiconductor layer 30 and its second surface 30b, which is opposite to the first surface 30a and which receives incoming light. As viewed from the photosensitive cells 2b, 2c, a reflecting portion 3a is arranged on the same side as the first surface 30a in order to reflect an infrared ray that has been transmitted through the photosensitive cell 2c and make it incident on one of the photosensitive cells 2b, 2c. As a result, the intensities of infrared rays to be converted photoelectrically by the photosensitive cells 2b, 2c will be different from each other. And by calculating the difference between the photoelectrically converted signals supplied from the photosensitive cells 2b, 2c, the infrared ray component received by each photosensitive cell can be obtained. In addition, by arranging a color filter 1b on the same side as the second surface 30b, an infrared ray component and a color component can be obtained at the same time. |
