ARRAY SUBSTRATE AND FABRICATING METHOD FOR THE SAME

摘要

PURPOSE: A thin film transistor and manufacturing method thereof are provided to increase the quality of a display device by preventing cross-talk after reducing leakage current. CONSTITUTION: An active layer(121) includes a channel region. A gate electrode copes with the channel region. A gate insulating layer(131) locates between an active layer and a gate electrode. The gate electrode includes a transparent conductive film(143) and a transparent conductive film(142).