| 摘要 |
<p>PURPOSE: A phase change memory device and a manufacturing method thereof are provided to eliminate heat dispersed to an adjacent memory cell in heating for writing a memory cell by forming a heat absorption layer between memory cells which are placed on the same bit line. CONSTITUTION: A plurality of bit lines(170) is arranged to be crossed with a plurality of word lines(110). A switching element(120) is respectively arranged in the cross point of the bit line and the word line. Heating electrodes are respectively connected to the switching element. A heat absorption layer(150b) is placed between neighboring heating electrodes. A phase change film(165) is formed in the upper part of the heating electrodes and the heat absorption layer.</p> |
