发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A semiconductor device is provided to implement high speed and high efficiency by reducing parasitic inductance component in a wire inside and outside a package. CONSTITUTION: In a semiconductor device, a fist die pad(7a1) has a first lead which is used as the input of a DC-DC converter. A second die pad(7a2) has a second lead which is used as the output of the DC-DC converter. A third die pad(7a3) has a third lead. A fourth lead supplies a ground voltage to the DC-DC converter. A first semiconductor chip(5a) comprises a high side MOSFET of the DC-DC converter A second semiconductor chip(5b) comprises the low side MOSFET of the DC-DC converter A third semiconductor chip(5c) has a first driver circuit and a second driver circuit. The first driver circuit drives the high side MOSFET. The second driver circuit drives the low side MOSFET. |
申请公布号 |
KR20110121599(A) |
申请公布日期 |
2011.11.07 |
申请号 |
KR20110105104 |
申请日期 |
2011.10.14 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
SATOU YUKIHIRO;WOONO TOMOAKI;MATSUURA NOBUYOSHI;SHIRAISHI MASAKI |
分类号 |
G11C5/02;H01L25/07;G11C5/06;G11C5/14;G11C7/02;H01L21/8234;H01L23/02;H01L23/495;H01L23/50;H01L25/00;H01L25/16;H01L25/18;H01L27/04;H01L27/088;H01L29/78;H02M3/155;H02M3/158 |
主分类号 |
G11C5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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