发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE: A semiconductor device is provided to implement high speed and high efficiency by reducing parasitic inductance component in a wire inside and outside a package. CONSTITUTION: In a semiconductor device, a fist die pad(7a1) has a first lead which is used as the input of a DC-DC converter. A second die pad(7a2) has a second lead which is used as the output of the DC-DC converter. A third die pad(7a3) has a third lead. A fourth lead supplies a ground voltage to the DC-DC converter. A first semiconductor chip(5a) comprises a high side MOSFET of the DC-DC converter A second semiconductor chip(5b) comprises the low side MOSFET of the DC-DC converter A third semiconductor chip(5c) has a first driver circuit and a second driver circuit. The first driver circuit drives the high side MOSFET. The second driver circuit drives the low side MOSFET.
申请公布号 KR20110121599(A) 申请公布日期 2011.11.07
申请号 KR20110105104 申请日期 2011.10.14
申请人 RENESAS ELECTRONICS CORPORATION 发明人 SATOU YUKIHIRO;WOONO TOMOAKI;MATSUURA NOBUYOSHI;SHIRAISHI MASAKI
分类号 G11C5/02;H01L25/07;G11C5/06;G11C5/14;G11C7/02;H01L21/8234;H01L23/02;H01L23/495;H01L23/50;H01L25/00;H01L25/16;H01L25/18;H01L27/04;H01L27/088;H01L29/78;H02M3/155;H02M3/158 主分类号 G11C5/02
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