发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A semiconductor device is provided to prevent output data from being distorted by outputting data at high speed with reliability. CONSTITUTION: A semiconductor device comprises an impedance control circuit(100), a PVT(Pressure, Volume, Temperature) sensing control circuit(200), a pull-up unit(310), and a pull-down unit(320). The pull-up unit and the pull down unit constitute a data output stage(300). The impedance control circuit peforms a ZQ calibration operation. The pull-up unit pulls up an output terminal for the output data of a high level by receiving data signal. The pull down unit pulls down the output terminal for the output data of a low level. A PVT sensing control circuit outputs a control signal to the pull-up unit and the pull down unit.
申请公布号 KR20110121162(A) 申请公布日期 2011.11.07
申请号 KR20100040627 申请日期 2010.04.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, JE YOON
分类号 H03K19/0175;H03K17/687 主分类号 H03K19/0175
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