| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a problem that, in a conventional nanoimprint lithography method developed to manufacture a highly integrated circuit at low cost, alignment accuracy for overlapping circuit patterns on a wafer is low and, in particular, it is unsuitable for the use of a durable and inexpensive metal mold. <P>SOLUTION: A lithography method is provided, in which a resist film having a circuit pattern is easily formed at low cost using a metal mold, and a nanoimprint technique is combined with a conventional contact exposure method using a conventional mask. The method remains an advantage that lithography can be readily performed using inexpensive and compact equipment having high alignment accuracy, and eliminates a disadvantage of the occurrence of particles. <P>COPYRIGHT: (C)2012,JPO&INPIT |
