| 摘要 |
PURPOSE: An etching solution composition for a metal layer comprising copper and titanium is provided to secure high etching speed on copper without using hydrogen peroxide and/or oxone. CONSTITUTION: An etching solution composition for a metal layer comprising copper and titanium comprises persulfate 5~20 weight%, fluorine compound 0.01~2 weight%, one or more selected among inorganic acid, inorganic acid salt, and their mixture 1~10 weight%, ring-type amino-compound 0.3~5 weight%, p-toluene sulfonic acid 0.1~5 weight%, and water of the remaining amount. The persulfate is selected from the group consisting of ammonium persulfate, sodium persulfate, and potassium persulphate. The fluorine compound is selected from the group consisting of ammonium fluoride, sodium fluoride, potassium fluoride, ammonium bifluoride, sodium bifluoride, and potassium.
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