PROCESS FOR MANUFACTURING EPITAXIAL SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a process for manufacturing an epitaxial single-crystal silicon carbide substrate capable of preventing basal plane dislocation contained in a single-crystal silicon carbide substrate from being continued in an epitaxial membrane to form a high quality epitaxial membrane, and an epitaxial single-crystal silicon carbide substrate obtained thereby.

SOLUTION: In a process for manufacturing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide membrane on a single-crystal silicon carbide substrate by chemical vapor deposition, the process for manufacturing an epitaxial single-crystal silicon carbide substrate includes: a main crystal growth step for occupying a main period of epitaxial growth and in which a growth temperature is T1; and a growth auxiliary step for accompanying a temperature-converting operation for varying a growth temperature up and down between a set temperature T0lower than the growth temperature and a set temperature T2higher than the growth temperature. Also provided is the obtained epitaxial single-crystal silicon carbide substrate.

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