发明名称 |
Cu-Si-Co ALLOY FOR ELECTRONIC MATERIAL, AND METHOD FOR PRODUCING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a Cu-Co-Si alloy which has improved balance between electrical conductivity and strength. <P>SOLUTION: The copper alloy for electronic materials contains 0.5-4.0 mass% of Co and 0.1-1.2 mass% of Si with the balance Cu and inevitable impurities, wherein the mass ratio of Co to Si (Co/Si) is 3.5≤Co/Si≤5.5, the area ratio of discontinuous precipitation (DP) cells is 5% or less and the average maximum width of the discontinuous precipitation (DP) cells is 2 μm or less. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2011219860(A) |
申请公布日期 |
2011.11.04 |
申请号 |
JP20110026184 |
申请日期 |
2011.02.09 |
申请人 |
JX NIPPON MINING & METALS CORP |
发明人 |
ONDA TAKUMA |
分类号 |
C22C9/06;C22C9/01;C22C9/02;C22C9/05;C22C9/10;C22F1/00;C22F1/08;H01B1/02 |
主分类号 |
C22C9/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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