发明名称 Cu-Si-Co ALLOY FOR ELECTRONIC MATERIAL, AND METHOD FOR PRODUCING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a Cu-Co-Si alloy which has improved balance between electrical conductivity and strength. <P>SOLUTION: The copper alloy for electronic materials contains 0.5-4.0 mass% of Co and 0.1-1.2 mass% of Si with the balance Cu and inevitable impurities, wherein the mass ratio of Co to Si (Co/Si) is 3.5&le;Co/Si&le;5.5, the area ratio of discontinuous precipitation (DP) cells is 5% or less and the average maximum width of the discontinuous precipitation (DP) cells is 2 &mu;m or less. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011219860(A) 申请公布日期 2011.11.04
申请号 JP20110026184 申请日期 2011.02.09
申请人 JX NIPPON MINING & METALS CORP 发明人 ONDA TAKUMA
分类号 C22C9/06;C22C9/01;C22C9/02;C22C9/05;C22C9/10;C22F1/00;C22F1/08;H01B1/02 主分类号 C22C9/06
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