| 摘要 |
PURPOSE: A programming method of a semiconductor memory device is provided to reduce a whole operation time by discharging unselected string in short time. CONSTITUTION: In a programming method of a semiconductor memory device, springs connected to an unselected bit lines is precharged. The electric potential of the strings connected to the unselected bit lines is increased to a first potential. The memory cells of the strings connected to the selected bit lines are programmed. The electric potential of the word lines is dropped to a second electric potential. The electric potential of unselected bit lines and word liens are dropped to a ground level. The electrical potential of the string connected to the unselected bit lines is discharged.
|
