| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the definition and the opening ratio and narrow the pixel pitch in an electrooptical device. <P>SOLUTION: A semiconductor layer (1a) of a TFT (30) is continuously formed from inside an opening part (35) overlapping with a crossing part (Cr) to the outside of the opening part (35), and includes a first source drain region (1b) electrically connected to a surface part of a data line (6) exposed on a bottom face of the opening part (35), a channel region (1a') provided for a sidewall of the opening part (35), and a second source drain region (1c) which is formed outside the opening part (35) and electrically connected to a pixel electrode (9). A gate electrode (3a) of the TFT (30) is formed inside the opening part (35) so as to overlap with at least the channel region (1a') and is electrically connected to a scan line (11). <P>COPYRIGHT: (C)2012,JPO&INPIT |
