| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus consisting of a silicon substrate and providing a sensitivity characteristic that is practically enough for a wavelength band including a near-infrared band. <P>SOLUTION: A silicon substrate 10 includes a first main surface 10a and a second main surface 10b which are opposed to each other. A plurality of receivers P<SB POS="POST">m,n</SB>, each of which has a photodiode that generates an electrical charge depending on the intensity of incident light, are arranged at the side of the first main surface 10a of the silicon substrate 10. An accumulation layer 21 is formed at the side of the second main surface 10b of the silicon substrate 10 and an irregularly uneven area 20 is formed on the second main surface 10b. A region in the second main surface 10b of the silicon substrate 10 that is opposed to the receivers P<SB POS="POST">m,n</SB>is optically exposed. Practically, the silicon substrate 10 is optically divided by isolation regions 23 into portions corresponding to the receivers P<SB POS="POST">m,n</SB>. <P>COPYRIGHT: (C)2012,JPO&INPIT |
