发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To solve the problem of having an impact on a TFT and a crack occurence when a pressure is applied during the bonding of a pair of substrates caused by arranging a columnar spacer in an area overlapped with the TFT. <P>SOLUTION: A dummy layer consisting of an inorganic material is formed below a columnar spacer formed in a position overlapped with a TFT. The dummy layer is arranged in the position overlapped with the TFT, so that a pressure applied to the TFT in a process of bonding a pair of substrates is distributed and relieved. The dummy layer is preferably formed from the same material as a pixel electrode because it is formed without increasing the number of processes. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011221551(A) 申请公布日期 2011.11.04
申请号 JP20110143749 申请日期 2011.06.29
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 FUJIKAWA SAISHI;HOSOYA KUNIO
分类号 G02F1/1343;G02F1/1339;G02F1/1368 主分类号 G02F1/1343
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