| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a light-emitting semiconductor device on a conductive carrier. <P>SOLUTION: The method of manufacturing a light-emitting diode (LED) comprises a step of providing a plurality of LEDs on a substrate wafer. Each LED includes an n-type and a p-type layer of a group III nitride material formed on an SiC substrate, and the n-type layer is sandwiched between the substrate and the p-type layer. A conductive carrier having an external surface to protect the LEDs is prepared. The LEDs are flip-chip mounted on the external surface of the conductive carrier. The SiC substrate is removed from the LEDs, and the n-type layer becomes the uppermost layer. Each contact is deposited on the n-type layer of each LED and the carrier is separated into each part, which separates each LED from the others and each LED is mounted to each part of the carrier. <P>COPYRIGHT: (C)2012,JPO&INPIT |
