| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for separating a semiconductor light-emitting device without using a dicer or scriber that is a consumable article. <P>SOLUTION: In the method, a semiconductor light-emitting device 30 of group III nitride compound is formed on one surface 12 of a sapphire substrate 10 by epitaxial growth and electrode formation, etc. (3.A). An unnecessary section formed near a separation line is removed by etching (3.B). An adhesive tape 60 is bonded and the substrate is scanned with a femtosecond pulse laser from the side of a surface 11 so as to form a groove section 50 and modified sections 51-54. A linearly polarized component is set so as to be parallel with a surface to be separated. A scanning rate is set so that the groove section 50 and modified section 51 are formed continuously and the modifier sections 52-54 are formed discontinuously, in a direction of the separation line, which are formed in order of the modifier sections 54, 53 and 52, the groove section 50, and the modifier section 51 (3.C and 3.D). Then, the semiconductor light-emitting device 30 is separated into pieces by applying an external force using a breaking knife (3.E). <P>COPYRIGHT: (C)2012,JPO&INPIT |
