| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern formation method for obtaining a negative pattern in which an exposed portion is insoluble in a developer containing an organic solvent, by applying a resist composition which contains a polymer compound having a repeating unit that has a hydroxyl group substituted by an acid labile group, an acid generator and an organic solvent on a substrate, exposing the resist film to high-energy rays after heat treatment, and dissolving an unexposed portion in the developer after heat treatment. <P>SOLUTION: In image formation using positive/negative reversal by development with an organic solvent, a photoresist film which contains a polymer compound having a repeating unit that has a hydroxyl group substituted by an acid labile group and an acid generator provides high dissolution contrast in which an unexposed portion has high solubility and an exposed portion has low solubility. By exposing the photoresist film with a grid-patterned mask and developing with the organic solvent, a fine hole pattern can be formed with excellent dimension-controllability and high sensitivity. <P>COPYRIGHT: (C)2012,JPO&INPIT |
