| 发明名称 |
METHOD FOR CRYSTALLIZING NONCRYSTALLINE SILICON FILM, THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for crystallizing a noncrystalline silicon film, a method for manufacturing a thin film transistor to which the method for crystallizing noncrystalline silicon film is applied, and a thin film transistor manufactured by the method for manufacturing a thin film transistor. <P>SOLUTION: A method for crystallizing according to embodiments of the present invention includes a step of forming a noncrystalline silicon film, a step of locating crystallization catalyst particles over the noncrystalline silicon film so as to be separated from each other, a step of selectively removing the crystallization catalyst particles over the noncrystalline silicon film, and a step of crystallizing the noncrystalline silicon film by heat treatment. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2011222936(A) |
申请公布日期 |
2011.11.04 |
| 申请号 |
JP20100181905 |
申请日期 |
2010.08.16 |
| 申请人 |
SAMSUNG MOBILE DISPLAY CO LTD |
发明人 |
YI DONG-HYON;YI KI-YONG;XU JIN-XU;JEONG MYON-JAE;SUN RONG-DE;SU BYONG-SOO;PARK SEUNG-KYU;LEE KIL-WON;JEONG YUNG-MO;PARK PYONG-KUN;PARK DONG-RYOK;YI TAK-YONG;JEONG JAE-FUAN |
| 分类号 |
H01L21/20;H01L21/336;H01L29/786 |
主分类号 |
H01L21/20 |
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