发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which an opening part is formed at a sealing member that seals a semiconductor element, in a shorter time. <P>SOLUTION: There are prepared a metal mold in which a projection part is provided on an inner peripheral surface and a sealed member 20 containing IGBT element 21N. The metal mold is arranged around the sealed member 20 so that the projection part and the IGBT element 21N face each other across a predetermined interval (L35) and the IGBT element 21N is sealed up inside the metal mold. A molten resin is filled inside the metal mold. Laser light is irradiated toward the IGBT element 21N from the surface side of a mold resin 11 through a recess 13 formed on the mold resin 11 by the projection part. By this, a contact hole through which a part of the surface of the IGBT element 21N is exposed is formed inside the recess 13. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011222684(A) 申请公布日期 2011.11.04
申请号 JP20100089189 申请日期 2010.04.08
申请人 MITSUBISHI ELECTRIC CORP 发明人 ISHIHARA MIKIO;SASAKI FUTOSHI
分类号 H01L21/56;H01L25/07;H01L25/18 主分类号 H01L21/56
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