| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a magnetic sensor element that can detect positional distribution of Z-axis direction component of a magnetic flux density at high spatial resolution. <P>SOLUTION: A magnetic sensor element 1000 according to the present invention includes a field-effect transistor 100 and a control section 200 for controlling the field-effect transistor 100. The field-effect transistor 100 comprises: a gate electrode 14, a first source region 32 and a second source region 34 that are formed side by side in the gate width direction at one side of the gate electrode 14; a first drain region 22, a second drain region 24, and a third drain region 26 that are formed side by side in the gate width direction at the other side of the gate electrode 14. The control section 200 performs a first control and a second control. The first control applies a voltage between the first source region 32 and the first and second drain regions 22 and 24. The second control applies a voltage between the second source region 34 and the second and third drain regions 24 and 26. <P>COPYRIGHT: (C)2012,JPO&INPIT |
