| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a failure is suppressed and microfabrication is attained, and to provide a semiconductor device in which microfabrication is attained while good characteristic is maintained. <P>SOLUTION: The semiconductor device includes a source electrode and a drain electrode provided apart from each other, a first insulation layer provided to contact to such side surface of the source electrode as faces the drain electrode as well as such side surface of the drain electrode as faces the source electrode, a second insulation layer provided to contact onto the first insulation layer, an oxide semiconductor layer that contacts to the second insulation layer, the source electrode and the drain electrode, a gate insulation layer which covers the oxide semiconductor layer, and a gate electrode on the gate insulation layer. The difference of elevation between the upper surface of the first insulation layer and the upper surface of the source electrode or the difference of elevation between the upper surface of the first insulation layer and the upper surface of the drain electrode is less than 5 nm, and the film thickness of the second insulation layer is 5 nm or larger. <P>COPYRIGHT: (C)2012,JPO&INPIT |
