NITRIDE ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE NITRIDE ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nitride electronic device having a structure capable of preventing an increase in carrier concentration in a channel layer to reduce leakage.

SOLUTION: An inclined surface 15a and a primary surface 15c of a semiconductor laminate 15 extend along a first reference surface R1 and a second reference surface R2, respectively. The primary surface 15c of the semiconductor laminate 15 tilts by 5 degrees or more to 40 degrees or less from a reference axis Cx indicating the c-axis direction of hexagonal group-III nitride. Since the angle formed by the normal line of the first reference surface R1 and the reference axis Cx is smaller than the angle formed by the normal line of the second reference surface R2 and the reference axis Cx, oxygen concentration in a channel layer 19 can be less than 1×1017cm-3. As a result, in the channel layer 19, an increase in carrier concentration can be prevented by the addition of oxygen, thereby reducing a leakage current of a transistor via the channel layer.

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