SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide technique for improving a manufacturing yield of a semiconductor device including a non-volatile memory cell having a split-gate structure.

SOLUTION: A selection gate electrode CG of a CG shunt portion is formed so that a second height d2 from the principal surface of a semiconductor substrate 1 of the selection gate electrode CG of the CG shunt portion positioned in a feeding region is lower than a first height d1 of a selection gate electrode CG from the principal surface of the semiconductor substrate 1 in a memory cell forming region.

COPYRIGHT: (C)2012,JPO&INPIT