| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent a passivation film from being removed from top-layer wiring composed of materials whose principal constituent is Cu. <P>SOLUTION: A semiconductor device 1 includes: an interlayer insulating film 26; a passivation film 33 composed of insulating materials and formed on the interlayer insulating film 26; top-layer wiring 28 composed of materials whose principal constituent is copper, and formed between the passivation film 33 and a surface of the interlayer insulating film 26; and a wiring coating film 31 composed of materials whose principal constituent is aluminium, and interposed between the passivation film 33 and the surface of the top-layer wiring 28 to coat the surface of the top-layer wiring 28. <P>COPYRIGHT: (C)2012,JPO&INPIT |
