RIDGE-TYPE SEMICONDUCTOR OPTICAL DEVICE AND METHOD OF MANUFACTURING RIDGE-TYPE SEMICONDUCTOR OPTICAL DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a ridge-type semiconductor optical device having a structure of ensuring a route for directly radiating heat from a cladding layer to an electrode with large heat conductivity and preventing large deterioration in optical device characteristics even on the condition of high operating environment temperature, and to provide a method of manufacturing the same.

SOLUTION: A ridge-type semiconductor laser 301 comprises a ridge cladding layer 14 in a ridge stripe shape that is defined by a top surface m of an etching stop layer 33 and a top surface r of the ridge cladding layer 14, and an insulating layer 13 that covers a side surface of the ridge cladding layer 14. A edge P of the insulating layer 13 located on the side surface of the ridge cladding layer 14 is located between the top surface r of the ridge cladding layer 14 and the top surface m of the etching stop layer 33.

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