发明名称 |
AN ETCHING SOLUTION COMPOSITION FOR METAL LAYER COMPRISING COPPER AND TITANIUM |
摘要 |
PURPOSE: An etching solution composition for a metal layer comprising copper and titanium is provided to implement rapid etching of copper without including hydrogen peroxide and/or oxone. CONSTITUTION: An etching solution composition for a metal layer comprising copper and titanium comprises persulfate 5~20 weight%, fluorine compound 0.01~2 weight%, one or more selected among inorganic acid, inorganic acid salt, and their mixture 1~10 weight%, ring-type amino-compound 0.3~5 weight%, chlorine-containing compound 0.1~5 weight%, and water of the remaining amount. |
申请公布号 |
KR20110120420(A) |
申请公布日期 |
2011.11.04 |
申请号 |
KR20100039822 |
申请日期 |
2010.04.29 |
申请人 |
DONGWOO FINE-CHEM CO., LTD. |
发明人 |
LIM, MIN KI;KWON, O BYOUNG;LEE, YU JIN;YU, IN HO |
分类号 |
C23F1/18;C23F1/30;H01L21/306 |
主分类号 |
C23F1/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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