| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress the variation in dimension of a circuit pattern (element) due to exposure. <P>SOLUTION: The photomask has a desired circuit pattern formed through processes of at least drawing, etching, resist peeling, etc. on a photomask blank having light-shielding function films 21' and 22' and a resist film 23 formed on a light-transmissive substrate 10'. The circuit pattern is formed by performing the etching process using inert gas in an etching atmosphere or an etchant not containing sulfur and is cleaned using a cleaning liquid other than sulfuric acid solution during cleaning for resist peeling and/or the final cleaning, whereby the variation in dimension of the circuit pattern is suppressed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
