| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a substrate in which an opening part tilted in an arbitrary direction can be formed, a method of manufacturing a semiconductor device, and an electrooptical device equipped with the semiconductor device applied with the same. <P>SOLUTION: In the method of manufacturing an element substrate 101 in one embodiment, with an interlayer insulator film 104, being a second insulator film, which covers a TFT110, being a semiconductor device, provided on the element substrate 101, and is provided with a hole 104a, being a first opening part, as a mask, dry-etching is applied on a gate insulator film 103, being a first insulator film, from one direction that intersects with a surface normal line 101a of the element substrate 101, so that a hole 103a, being a second opening part, which communicates with the hole 104a and is opened on a drain electrode 110d of the TFT110 is formed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
