发明名称 WIRING FOR SEMICONDUCTOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a wiring material which does not lose conductivity even under an oxidation process at 500&deg;C, which has a work function of TiN or higher, and which is less expensive than precious metals. <P>SOLUTION: A wiring material which is a NiTi mixture film and has a Ti content, represented by Ti/(Ni+Ti), with a composition ratio of 60-80 at.% is used and transformed into a mixture film containing Ni and TiO<SB POS="POST">2</SB>through a high-temperature oxidation process at 500&deg;C or higher. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011222699(A) 申请公布日期 2011.11.04
申请号 JP20100089473 申请日期 2010.04.08
申请人 ELPIDA MEMORY INC 发明人 TANIOKU MASAMI;CHO YOSHINORI
分类号 H01L23/52;H01L21/3205;H01L21/8242;H01L27/108 主分类号 H01L23/52
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