METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device including a compound semiconductor layer with excellent crystallinity, especially a group III nitride compound semiconductor layer.

SOLUTION: A method of manufacturing a semiconductor device comprises: a step of depositing a base layer on a sapphire substrate; a step of forming a stripe-shaped pattern mask of a SiO2film on the base layer and etching the base layer and an upper part of the sapphire substrate to form a convexo-concave structure periodically having a stripe-shaped convex part and a groove-shaped concave part; a step of growing a GaN layer on the convexo-concave structure using a lateral growth method; a step of forming an identification mark on at least one surface of the substrate before (or after) the lateral growth step; and a positioning step of positioning a semiconductor device formation region on a low-defect density region with reference to the identification mark. An identification of a low-defect density region and a positioning of a semiconductor device formation region are performed by using alternate and periodical formation of a low-defect density region and a high-defect density region.

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