| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a BiTi-based oxide target containing a Bi<SB POS="POST">4</SB>Ti<SB POS="POST">3</SB>O<SB POS="POST">12</SB>phase which has high density and hardly causes abnormal discharge and enables sputtering to be performed with the consistent film composition, and to provide a method for manufacturing the same. <P>SOLUTION: The target is provided in which the atom ratio of Bi to Ti as metal components of the BiTi-based oxide target is Bi:Ti=6:x (3<x<7). In particular, the intensity of the diffraction peak by the (110) plane of the TiO<SB POS="POST">2</SB>phase is <8.6% of the intensity of the diffraction peak by the (171) plane of the Bi<SB POS="POST">4</SB>Ti<SB POS="POST">3</SB>O<SB POS="POST">12</SB>phase, or the intensity of the diffraction peak by the (013) plane of the Bi<SB POS="POST">2</SB>O<SB POS="POST">3</SB>phase is <72.4% of the intensity of the diffraction peak by the (171) plane of the Bi<SB POS="POST">4</SB>Ti<SB POS="POST">3</SB>O<SB POS="POST">12</SB>phase, by the X-ray diffraction of the target. <P>COPYRIGHT: (C)2012,JPO&INPIT |
