| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photolithographic process allowing reduction of an alignment error of an exposure shot formed on a wafer using a method not increasing costs, improving the accuracy of superposition between upper and lower mask patterns even when exposure devices having different shot area sizes are used together. <P>SOLUTION: A photomask provided with an alignment error measurement mark for an exposure shot is loaded onto an exposure device, and a resist pattern of the mark is formed on a wafer. Then, the mark is used to measure an amount relating to a shift due to an exposure shot alignment error. Then, an error component in the case in which the measured amount is considered to be a superposition error between the upper and lower layers is calculated, and an error component relating to the exposure shot alignment error is calculated from the calculated error component. Then, the calculation result is determined. If the error component value does not meet predefined criteria, the calculated error component value relating to the exposure shot alignment is used to correct a parameter of the exposure device so as to meet the criteria. <P>COPYRIGHT: (C)2012,JPO&INPIT |
