| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus for producing a silicon carbide single crystal ingot which allows a silicon carbide single crystal ingot having a long ingot length and high quality to be obtained in producing the silicon carbide single crystal ingot by an improved Rayleigh method using a seed crystal. <P>SOLUTION: There is provided an apparatus S<SB POS="POST">1</SB>for producing a silicon carbide single crystal ingot by a sublimation recrystallization method. The apparatus has a space 6 between a crucible 1 and a heat insulator 5 covering the external surface of the crucible. The space 6 has a width dimension of 5 to 40 mm in the diameter direction of the axisymmetric crucible 1 and communicates with the outside of the heat insulator 5. The apparatus can suppress the performance degradation of the heat insulator 5 during crystal growth and obtain a stable growing condition. <P>COPYRIGHT: (C)2012,JPO&INPIT |
