| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a SiC semiconductor element which corrects the warpage of a SiC substrate caused by thinning process. <P>SOLUTION: The method for manufacturing the semiconductor element includes the steps of: (a) preparing a SiC substrate 1 provided with an element active region on a front surface; (b) fixing the front surface of the SiC substrate 1 on a flat surface and grinding the rear surface; and (c) forming inner stress layers, which give stress to cancel the warpage of the SiC substrate caused by grinding, within the SiC substrate, while the front surface of the SiC substrate 1 is fixed to the flat surface. <P>COPYRIGHT: (C)2012,JPO&INPIT |
