SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method capable of assuring a low on-resistance in a stable manner as well as providing an excellent vertical breakdown strength.

SOLUTION: The semiconductor device is formed as a GaN laminate containing an n-type drift layer 4, a p-type layer 6, and an n-type surface layer 8. A regrowth layer 27 is formed which contains a channel covering the GaN laminate exposed in an opening part 28. The channel is a two-dimensional electron gas formed on an interface to an electron supply layer of an electron transit layer. A p-type impurity inclination layer 7 is provided in which the thickness of the p-type layer 6 is in the range of d to 10d, where the thickness of the electron transit layer 22 is assumed as d, and the concentration of p-type impurity in the p-type layer decreases from a (p-type layer/n-type surface layer) interface into the n-type surface layer.

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