发明名称 |
METHODS FOR CHEMICAL ETCHING OF SEMICONDUCTOR NANOCRYSTALS |
摘要 |
PURPOSE: A chemical etching method of a semiconductor nanocrystal is provided to induce an anisotropic crystal plane selective etching reaction of the semiconductor nanocrystal by dissolving the semiconductor nanocrystal in a halogenated solvent, thereby controlling the shape and matter properties of the semiconductor nanocrystal. CONSTITUTION: A chemical etching method of a semiconductor nanocrystal is comprised of the following steps. A solution is arranged by dissolving phosphine in a halogenated solvent. The solution is exposed to oxygen. A chemical etching process of a semiconductor nanocrystal is induced by adding a semiconductor nanocrystal in the solution. The semiconductor nanocrystal is made of a hetero structure including one or more compositions.
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申请公布号 |
KR20110120151(A) |
申请公布日期 |
2011.11.03 |
申请号 |
KR20100039697 |
申请日期 |
2010.04.28 |
申请人 |
POSTECH ACADEMY-INDUSTRY FOUNDATION |
发明人 |
SHIN, SEUNG KOO;KIM, WON JUNG;LIM, SUNG JUN |
分类号 |
H01L21/3063 |
主分类号 |
H01L21/3063 |
代理机构 |
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代理人 |
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地址 |
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