发明名称 METHODS FOR CHEMICAL ETCHING OF SEMICONDUCTOR NANOCRYSTALS
摘要 PURPOSE: A chemical etching method of a semiconductor nanocrystal is provided to induce an anisotropic crystal plane selective etching reaction of the semiconductor nanocrystal by dissolving the semiconductor nanocrystal in a halogenated solvent, thereby controlling the shape and matter properties of the semiconductor nanocrystal. CONSTITUTION: A chemical etching method of a semiconductor nanocrystal is comprised of the following steps. A solution is arranged by dissolving phosphine in a halogenated solvent. The solution is exposed to oxygen. A chemical etching process of a semiconductor nanocrystal is induced by adding a semiconductor nanocrystal in the solution. The semiconductor nanocrystal is made of a hetero structure including one or more compositions.
申请公布号 KR20110120151(A) 申请公布日期 2011.11.03
申请号 KR20100039697 申请日期 2010.04.28
申请人 POSTECH ACADEMY-INDUSTRY FOUNDATION 发明人 SHIN, SEUNG KOO;KIM, WON JUNG;LIM, SUNG JUN
分类号 H01L21/3063 主分类号 H01L21/3063
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