| 摘要 |
A phase change memory device includes a plurality of word lines, a plurality of bit lines disposed to be crossed with the plurality of word lines, switching devices disposed at intersections of the plurality of word lines and the plurality of bit lines, heating electrodes connected to the switching devices respectively, heat absorbing layers disposed between adjacent heating electrodes, and phase change layers formed on the heating electrodes and the heat absorbing layers and extended in the same direction of the bit line.
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