发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device may include, but is not limited to: a semiconductor substrate; a memory capacitor; and a first compensation capacitor. The semiconductor substrate has at least first and second regions. The memory capacitor is positioned over the first region. The memory capacitor may include, but is not limited to: a first lower electrode; and a first dielectric film covering inner and outer surfaces of the first lower electrode. The first compensation capacitor is positioned over the second region. The first compensation capacitor includes, but is not limited to: a second lower electrode; a second dielectric film covering an inner surface of the second lower electrode; and a first insulating film covering an outer surface of the second lower electrode.
申请公布号 US2011266603(A1) 申请公布日期 2011.11.03
申请号 US201113094142 申请日期 2011.04.26
申请人 ELPIDA MEMORY, INC. 发明人 NAKAMURA YOSHITAKA;YAMAZAKI YASUSHI
分类号 H01L29/92;H01L27/06 主分类号 H01L29/92
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