SEMICONDUCTOR DEVICES INCLUDING STORAGE NODE LANDING PADS SEPARATED FROM BIT LINE CONTACT PLUGS

摘要

A Dynamic Random Access Memory (DRAM) device can include a semiconductor substrate that includes an active region including a source region therein. A gate line can cross the active region and a first contact plug can be on the active region adjacent to the gate line and can be connected to the source region. A conductive layer can be on the first contact plug to expose a portion of the first contact plug and a capacitor storage node electrode can be on the conductive layer.