SEMICONDCUTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor structure and manufacturing method thereof are provided. The manufacturing method includes: a semiconductor substrate, a semiconductor device located on the semiconductor substrate; a copper diffuse barrier layer (210) deposited on the semiconductor substrate; a copper compound layer (220) formed on the copper diffuse barrier layer (210); according to shape of interconnection, the copper compound layer (220) decomposed to copper, the copper compound layer (220) located the corresponding position of the need forming copper interconnection, the non-decomposed copper compound layer (220) and the lower copper diffuse barrier layer (210) are etched, the interconnection is formed between the semiconductor devices. The method is applicable to interconnection manufacturing of semiconductor integrated circuit.