| 摘要 |
Disclosed is a developing method that performs a developing for forming a second resist pattern after forming and exposing a resist film on a surface of a substrate on which a first resist pattern is formed. The method includes a first process for developing the substrate for a first time period t1 in the state where the substrate stops, and a second process for developing the substrate for a second time period while rotating the substrate. The time ratio of first time period and second time period is adjusted so that a critical dimension of the first resist pattern is equal to a first predetermined value, and a total time of first time period and second time period is adjusted so that a critical dimension of the second resist pattern is equal to a second predetermined value.
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