| 摘要 |
A method for manufacturing a semiconductor wafer (112) is provided. The method comprises providing a monocrystalline silicon wafer (102), epitaxially growing a first layer (108) of a first material on the silicon wafer (102), and epitaxially growing a second layer (110) of a second material on the first layer. Said first material is monocrystalline silicon carbide, and said second material is monocrystalline silicon. |
