发明名称 |
VAPOR DEPOSITION DEVICE, VAPOR DEPOSITION METHOD, AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD |
摘要 |
<p>In the disclosed vapor deposition method, by using a structure wherein an inner diameter (W1) of a group-V source gas introduction piping (42) is greater than an outer diameter (W2) of a group-III source gas introduction piping (44), and the group-III source gas introduction piping (44) is inserted one-to-one into the interior of the group-V source gas introduction piping (42), the group-III source gas piping (44) is thereby prevented from being cooled by a cooling mechanism, and hardening of metallic materials upon the surface of the wall of the piping is alleviated. It is thus possible to provide a vapor deposition device, a vapor deposition method, and a semiconductor element manufacturing method, which are capable of efficaciously introducing easily hardening metallic materials into a reactor without the metallic materials adhering to a showerhead or a piping, and to carry out efficacious doping.</p> |
申请公布号 |
WO2011136077(A1) |
申请公布日期 |
2011.11.03 |
申请号 |
WO2011JP59581 |
申请日期 |
2011.04.19 |
申请人 |
SHARP KABUSHIKI KAISHA;ADACHI, YUSUKE;SAKAGAMI, HIDEKAZU |
发明人 |
ADACHI, YUSUKE;SAKAGAMI, HIDEKAZU |
分类号 |
H01L21/205;C23C16/455 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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