发明名称 |
HIGH-TEMPERATURE SELECTIVE DRY ETCH HAVING REDUCED POST-ETCH SOLID RESIDUE |
摘要 |
Methods of dry etching silicon-containing dielectric films are described. The methods include maintaining a relatively high temperature of the dielectric films while etching in order to achieve reduced solid residue on the etched surface. Partially or completely avoiding the accumulation of solid residue increases the etch rate.
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申请公布号 |
US2011266252(A1) |
申请公布日期 |
2011.11.03 |
申请号 |
US20100839651 |
申请日期 |
2010.07.20 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
THADANI KIRAN V.;TANG JING;INGLE NITIN;YANG DONGQING |
分类号 |
H05K3/00;C23F1/02 |
主分类号 |
H05K3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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