An amic acid or amic ester precursor can be applied to a substrate to form a thin film, and is then thermally converted into a semiconducting layer of the corresponding arylene diimide. This semiconducting thin film can be used in various articles including thin- film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated onto the substrate but is generated in situ from a solvent-soluble, easily coated precursor compound.
申请公布号
WO2011137133(A2)
申请公布日期
2011.11.03
申请号
WO2011US34020
申请日期
2011.04.27
申请人
EASTMAN KODAK COMPANY;SHUKLA, DEEPAK;MEYER, DIANE, M.;AHEARN, WENDY, G.