NOVEL COMPOUND AND USE THEREOF

摘要

Provided is a copper plating technique that enables the filing of high aspect-ratio via-holes and through-holes in semiconductor substrates such as silicon substrates, organic material substrates and ceramic substrates. The disclosed technique involves a copper plating method, a copper plating bath and copper plating additives that include a tertiary amine compound represented by general formula 1 (wherein the R1 moiety is a C2 - C30 glycol ether represented, the R2 moieties are hydrocarbons that form 5-membered rings, 6-membered rings or a 5- and a 6-membered ring and the R2 moieties may include a C3 - C8 unsaturated bond and may be substituted with nitrogen atoms or oxygen atoms) and/or a quaternary amine compound thereof.