NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A nonvolatile memory device includes a plurality of strings each having vertically-stacked active layers over a plurality of word lines, at least one bit line connection unit vertically formed over one end of the word lines and having a stairway shape, and a plurality of bit lines each coupled to each of a plurality of active regions of the bit line connection unit.