| 摘要 |
A non-volatile memory device may include a memory cell array, a page buffer, a column decoder, a column selection circuit and a repair circuit. The memory cell array includes normal memory cells and redundancy memory cells. In one example, the page buffer may load normal data and redundancy data from the memory cell array. The column decoder may generate a normal column selection signal and a redundancy column selection signal in response to a column address. The column selection circuit may select the normal data and redundancy data in response to the normal column selection signal and redundancy column selection signal. The repair circuit may then output one of the normal data and redundancy data.
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