| 摘要 |
<p>Disclosed is a semiconductor device having a small feedback capacity and a small switching loss. The semiconductor device is provided with: a semiconductor substrate (20); a drift layer (21), which is formed on the front surface of the semiconductor substrate (20); a plurality of first well regions (41), which are formed on the front surface of the drift layer (21); a source region (80), which is a region formed on the front surface of each first well region (41), and which specifies the front surface of each first well region (41) as a channel region, said first well region being sandwiched between the source region and the drift layer (21); a gate electrode (50), which is formed from above the channel region to above the drift layer (21) with a gate insulating film (30) therebetween; and a second well region (43), which is embedded in the drift layer (21) below the gate electrode (50), and which is formed by being connected to the first well regions (41) adjacent to the second well region.</p> |
