| 摘要 |
PURPOSE: A semiconductor memory device is provided to remove a current path between bit lines which is formed unintentionally by applying different voltage to a bit line connected to a cell array. CONSTITUTION: In a semiconductor memory device, a memory cell array(100) comprises a plurality of memory cells. A plurality of bit lines are respectively connected to the plural memory cells. A first power source voltage supply circuit(201) supplies a first supply voltage to the memory cell array. A second power supply circuit(202) supplies a second supply voltage to the memory cell array. A first address selector circuit(210) receives a bit line address. A first address selector circuit connects a selected bit line to a first power source voltage supply circuit. A second address selector circuit(220) receives a bit line address. A second address selector circuit interlinks the selected bit line to a second power supply circuit.
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